| 摘要 |
A sense amplifier circuit having a folded bit line structure in a semiconductor memory device and a driving method thereof are provided to improve driving capability of the sense amplifier by performing under-drive at the driving time. Bit lines have a folded bit line structure. A sense amplifier comprises a pull-down device of an NMOS transistor and a pull-up device of a PMOS transistor, and performs data exchange between the bit lines. A bit line selection part(13) is arranged in bit lines of both sides of the sense amplifier and controls connection between the bit line and the sense amplifier. A driving control part(20) provides a pull-up and pull-down driving voltage to the sense amplifier for the data exchange, and performs under-drive of providing a voltage lower than a first voltage to a pull-down driving stage of the sense amplifier while a normal pull-down of providing the first voltage to the pull-down driving stage of the sense amplifier is performed for pull-down of the sense amplifier.
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