发明名称 TEMPERATURE BASED DRAM REFRESH
摘要 A system for controlling the refresh cycles of a DRAM cell array based upon a temperature measurement. During active mode, a refresh request indication based on a measured temperature is provided to a DRAM controller (e.g. of another integrated circuit die), wherein the DRAM controller (121) initiates a refresh cycle of the DRAM cell array (105) in response thereto. In a self refreshing mode, the DRAM controller does not initiate refresh cycles, but refresh cycles are performed by a controller on the integrated circuit die of the array based upon a temperature measurement.
申请公布号 KR20070085662(A) 申请公布日期 2007.08.27
申请号 KR20077012465 申请日期 2005.11.10
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 CRUZ ARNALDO R.;QURESHI QADEER A.
分类号 G11C11/406;G11C11/401 主分类号 G11C11/406
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