| 摘要 |
A CVD process is provided to cause thin films to be uniformly deposited onto wafers using sectionalized temperature control even if the wafers are loaded to only a lower portion of a process tube. In a CVD process, a thin film deposition region(A) is formed within a process tube(110), and a plurality of wafers are transferred into the thin film deposition region so that a thin film is deposited on the wafers. The thin film deposition region is sectionalized into an upper region(U), a central upper region(CU), a central lower region(CL) and a lower region(L). Temperature sensors(141,142,143,144,145) and a heater(130) are used to independently control the temperatures in the upper region, the central upper region, the central lower region and the lower region. The central lower region is determined as a reference point for controlling the temperature.
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