| 摘要 |
A vapor-phase deposition apparatus is provided to obtain a satisfactory distribution of temperature at the edge of a substrate by guaranteeing the temperature of the substrate. A first support part is disposed in a chamber(120), coming in contact with the back surface of a substrate(101) to dispose the substrate. A support table is connected to the first support part, having a second support part for supporting the first support part. A heat source heats the substrate, disposed on the back surface of the substrate in a position farther separated from the substrate than the support table. A gas is supplied to the chamber to form a layer by a first flow path. The gas is exhausted from the chamber by a second flow path. A material for forming the first support part has higher thermal conductivity than a material for forming the second support part.
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