发明名称 |
Triode type or diode type cathode structure for use in field emission flat panel display, has slots dimensioned to subsist isolating layer`s zone that is not covered by gate electrode, and resistive layer covered by gate conductors |
摘要 |
<p>#CMT# #/CMT# The structure has an electrical isolating layer (24) and an gate electrode (25) that comprise slots which are dimensioned to subsist the electrical isolating layer`s zone that is not covered by the gate electrode. A width of the slot in the electrical isolating layer has a dimension that is restrained for guiding carbon nanotudes (28) in a direction perpendicular to a support (21). A resistive layer (31) partially covers the gate electrode, and is covered by gate conductors. #CMT#USE : #/CMT# Used in a field emission flat panel display (claimed). #CMT#ADVANTAGE : #/CMT# The cathode structure permits to optimize the leakage current. The resistive layer is covered by gate conductors, thus reducing the power consumption of the display with respect to the structure. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view of a cathode structure. 21 : Support 24 : Electrical isolating layer 25 : Gate electrode 28 : Carbon nanotudes 31 : Resistive layer.</p> |
申请公布号 |
FR2897718(A1) |
申请公布日期 |
2007.08.24 |
申请号 |
FR20060050601 |
申请日期 |
2006.02.22 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ETABLISSEMENT PUBLIC A CARACTERE INDUSTRIEL ET COMMERCIAL |
发明人 |
DIJON JEAN;NICOLAS PIERRE |
分类号 |
H01J9/02;H01J1/304;H01J31/12;H01L51/00 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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