| 摘要 |
A method (300) for increasing deposition rates of metal layers from metal-carbonyl precursors (52, 152) by mixing a vapor of the metal-carbonyl precursor (52, 152) with CO gas. The method (300) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate (25, 125, 400, 402) to the process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process.
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