TRANSPARENT CONTACT ELECTRODE FOR SI NANOCRYSTAL LIGHT-EMITTING DIODES, AND METHOD OF FABRICATING

摘要

A semiconductor light emitting device using silicon nano dots is provided to improve contact force and an electrical characteristic between an electron injection layer and a transparent conductive electrode by forming a metal layer including a metal nano dot between the electron injection layer and the transparent conductive electrode. A light emitting layer(20) emits light. A hole injection layer(10) is formed in the light emitting layer. An electron injection layer(30) is formed in the light emitting layer to confront the hole injection layer. A metal layer(40) includes metal nano dots formed in the electron injection layer. A transparent conductive electrode(50) is formed in the metal layer. The light emitting layer can include an amorphous silicon nitride including silicon nano dots.