| 摘要 |
[PROBLEMS] To provide a metallized aluminum nitride substrate that as a metallized aluminum nitride substrate for mounting of semiconductor elements, such as LD and LED, excels in the dimensional precision of wiring pattern and realizes high junction strength. [MEANS FOR SOLVING PROBLEMS] First, there is provided an intermediate material substrate consisting of a sintered aluminum nitride substrate having on its surface a wiring pattern constituted of a conductor layer composed of a composition comprising at least a high-melting-point metal powder, an aluminum nitride powder and an aluminum nitride sintering aid. Subsequently, the intermediate material substrate is sintered while disposing an aluminum nitride sintering product, the aluminum nitride sintering product having been sintered with the use of a sintering aid of the same type as that of the sintering aid contained in the above composition, in contact with the conductor layer on the surface of the intermediate material substrate or in the vicinity thereof. |
