SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER FOR IGBT

摘要

A silicon single crystal wafer for an IGBT(Insulated Gate Bipolar Transistor) and a method for manufacturing the silicon single crystal wafer for the IGBT are provided to prevent a leak current by eliminating a crystal originated particle and a potential cluster. A high pure poly crystal silicon and a silicon wafer having a CVD(Chemical Vapor Deposition) layer are loaded into a furnace(1). Nitrogen concentration in the poly crystal silicon is from 1X10^14 atom/cm^3 to 5X10^15 atom/cm^3. A magnetic field supply apparatus(9) supplies magnetic field to a fused liquid surface and a heater(2) heats the poly crystal silicon to make a fused silicon liquid(3). A seed crystal(T) mounted on a seed chuck(5) is dipped into the fused silicon liquid and lifted therefrom as rotating the furnace and a lifting axis(4). Neutron ray is irradiated onto single crystal silicon to which a dopant is not added in order to control resistivity.