| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor integrated circuit in which the surface of polished copper is clean even when a polishing liquid containing colloidal silica, where the surface exhibiting excellent polishing performance is covered at least partially with aluminum, as abrasive grains is employed. <P>SOLUTION: The process for fabricating a semiconductor integrated circuit comprises a step for polishing a substrate having a conductor film of copper or its alloy by using a polishing liquid containing colloidal silica, where the surface is covered at least partially with aluminum atom, as abrasive grains, and a cleaning step using a cleaning liquid containing quaternary ammonium salt, chelating agent having a carboxyl group, and a surfactant. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
