| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an AlN crystal allowing a semiconductor device having good characteristics to be obtained, an AlN crystal, an AlN crystal substrate, and a semiconductor device manufactured by using the AlN crystal substrate. SOLUTION: A manufacturing method of an AlN crystal 8 comprises: a step for growing the AlN crystal 8 on the surface of an SiC seed crystal substrate 3; and a step for extracting at least a part of the AlN crystal 8b in a range 8a of 2 mm to 60 mm on the AlN crystal 8 side from the surface of the SiC seed crystal substrate 3. Moreover, there are provided the AlN crystal 8 obtained by the method, the AlN crystal substrate, and a semiconductor device manufactured by using the AlN crystal substrate. COPYRIGHT: (C)2007,JPO&INPIT
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