| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric capacitor capable of reducing the leakage current between the upper electrode and the lower electrode thereof and capable of forming the ferroelectric capacitor by package processing, and to provide a manufacturing method of a semiconductor memory. SOLUTION: A TiAlN film 32A, lower electric conductor films (33A, 33B and 33C), a ferroelectric film 34A, and an upper electric conductor film 35A are successively formed on an interlayer insulating film 21 of a semiconductor substrate 11. Then, a TiN film 33D, a silicon oxide film 34B, and a TiN film 35B are successively formed on the upper conductor film 35A. Then, lamination films (33D, 34B and 35B) are patterned, and these are used as a mask to etch the upper conductor film 35A, the ferroelectric film 34A, and the lower conductor films (33A, 33B and 33C), thereby forming the ferroelectric capacitor 30. Then, the exposed TiAlN film 32A is etched under a low temperature condition e.g. not higher than 80°C using a mixed gas containing a reducing gas. COPYRIGHT: (C)2007,JPO&INPIT
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