发明名称 Multiple level cell memory device with single bit per cell, re-mappable memory block
摘要 A non-volatile memory device has a plurality of memory cells that are organized into memory blocks. Each block can operate in either a multiple level cell mode or a single bit per cell mode. One dedicated memory block is capable of operating only in the single bit per cell mode. If the dedicated memory block is found to be defective, a defect-free block can be remapped to that dedicated memory block location to act only in the single bit per cell mode.
申请公布号 US2007195600(A1) 申请公布日期 2007.08.23
申请号 US20070787788 申请日期 2007.04.18
申请人 MICRON TECHNOLOGY, INC. 发明人 ROOHPARVAR FRANKIE F.
分类号 G11C14/00;G11C11/34;G11C11/56;G11C16/04 主分类号 G11C14/00
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