| 摘要 |
<p>This invention provides a process for producing a SiC single crystal by a solution method, which can stably maintain the flatness of a growth face and can prevent polycrystallization to grow a large-diameter SiC single crystal. The process for producing a SiC single crystal comprises growing a hexagonal SiC single crystal, which starts from a hexagonal SiC seed crystal held just below a melt surface while maintaining such a temperature gradient that the temperature is decreased from the inside of an Si melt within a graphite crucible toward the melt surface. In this process, the SiC single crystal is grown on a plane inclined at a predetermined off angle from (0001) plane of the SiC seed crystal toward (1-100). The off angle is preferably 1 to 30 degrees. Most preferably, the SiC single crystal is grown on (1-100) plane having an off angle of 90 degrees.</p> |
