| 摘要 |
<p>A predetermined quantity of pure water is fed onto the central portion of a wafer having a resist pattern formed thereon, and the wafer is rotated to spread the pure water into a circular shape near the central portion of the wafer. Next, the pure water of the wafer is fed with a water-soluble resist pattern size reducing agent. After this, the wafer is rotated at a high speed to spread the resist pattern size reducing agent all over the surface of the wafer. After this, a heating is performed to modify the lower layer portion of the resist pattern size reducing agent near the surface of the resist pattern, into a state insoluble to water, thereby to harden that portion. After this, the unhardened portion of the resist pattern size reducing agent is rinsed and removed with the pure water. Thus, the hardened film is formed on the inner wall face of the recess of the resist pattern so that the resist pattern is reduced in size. In the RELACS technique, the quantity of the resist pattern size reducing agent to be used is reduced to homogenize the pattern sizes in the wafer face.</p> |
