| 摘要 |
A method for fabricating a semiconductor device is provided to effectively perform a subsequent process by effectively removing the step between a cell region and a peripheral circuit region. A capacitor(21) is formed on a cell region of a semiconductor substrate(20) having the cell region and a peripheral circuit region. A preliminary insulation layer(22) is formed on the capacitor, having a relatively high height in the cell region and a relatively low height in the peripheral circuit region. A preliminary NSP(node separate polymer) layer is formed on the preliminary insulation layer wherein the preliminary NSP layer is uniformly removed from its upper part by a develop process. A part of the preliminary NSP layer positioned on the cell region is removed to change the preliminary NSP layer into an NSP layer(23) position positioned on the peripheral circuit region so that a part of the preliminary insulation layer positioned on the cell region is exposed. The preliminary insulation layer positioned on the cell region is removed to change the preliminary insulation layer into an insulation layer. When the preliminary NSP layer is changed into the NSP layer, the preliminary NSP layer is comparatively uniformly removed from its upper part. The NSP layer positioned on the peripheral circuit region can be eliminated, and a planarization process is performed on the preliminary insulation layer.
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