| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method capable of enhancing gas utilization efficiency and realizing excellent film deposition characteristics when performing the film deposition with a plurality of kinds of gases. SOLUTION: The film deposition apparatus 100 includes a reaction chamber 102 for performing the film deposition, a first gas feed line 112 and a second gas feed line 152 for feeding a first raw material A and a gas B to the reaction chamber 102, respectively, and an excitation part 106 for performing the plasma excitation of the gas to be fed to the reaction chamber 102. In the film deposition apparatus 102 of this configuration, the film deposition is performed by a first step of feeding a gas derived from the first raw material A and the gas B to the reaction chamber 102, and forming a deposition layer by adsorbing the gas derived from the first raw material A on a substrate, and a second step of feeding the second gas to the reaction chamber 102 and working the gas in a plasma-excited state on the deposition layer. COPYRIGHT: (C)2007,JPO&INPIT
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