| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for processing a silicon substrate capable of improving the dimensional accuracy of a slit, in particular, the dimensional accuracy of the length of a narrow width part when a channel part and the slit with the narrow width part with a width narrower than that of the channel part are formed on the silicon substrate. SOLUTION: The method has a first etching process wherein a protective film 52 with a specified shape is formed on the silicon substrate 110, an anisotropic etching of the silicon substrate is performed by using this protective film as a mask, to form the slit so as to make the length of the narrow width part longer than a specified length, a mask processing process wherein a cutout part 52a is formed on the protective film in a region corresponding to a protruding part 16 provided by protruding more inside of the slit than the side face of the channel part and forming the narrow width part so that at least a part of the end face on the narrow width part side of the protruding part is exposed, and a second etching process wherein by performing the anisotropic etching of the silicon substrate by using the protective film with the cutout part as the mask, the narrow width part is made to be a specified length. COPYRIGHT: (C)2007,JPO&INPIT
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