| 摘要 |
A method for forming a fine pattern of a semiconductor device comprises: forming a photoresist layer including a first photoresist pattern region having a first pattern density and a second photoresist pattern region having a second pattern density which is denser than the first pattern density; performing an exposure process selectively exposing one of the first and the second photoresist pattern regions with an exposure mask; and performing a resist flow process on the resulting structure.
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