发明名称 Resin layer formation method, semiconductor device and semiconductor device fabrication method
摘要 The resin layer formation method comprises the step of forming on a substrate 10 a resin layer 34 for containing a substance for decreasing the thermal expansion coefficient to thereby forming a resin layer 34 having said substance localized in the side thereof nearer to the substrate 10 ; and the step of cutting the surface of the resin layer 34 with a cutting tool 40 to planarize the surface of the resin layer 34 . The resin layer 34 as said substance for decreasing the thermal expansion coefficient localized in the side thereof nearer to the substrate 10 , and the surface of the resin layer 34 is cut to planarize the surface of the resin layer 34 , whereby the extreme abrasion and breakage of the cutting tool 40 by said substance for decreasing the thermal expansion coefficient can be prevented.
申请公布号 US2007194412(A1) 申请公布日期 2007.08.23
申请号 US20060442405 申请日期 2006.05.30
申请人 FUJITSU LIMITED 发明人 NAKAGAWA KANAE;TANI MOTOAKI
分类号 H01L23/58;H01L21/47 主分类号 H01L23/58
代理机构 代理人
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