| 摘要 |
A process for manufacturing a semiconductor device includes the steps of: forming a gate oxide film and a gate electrode on a substrate; forming a SiCN protection film on the gate electrode; depositing an interlayer dielectric film for covering the SiCN protection film; etching the dielectric film in a self-alignment with the SiCN protection film to form a contact hole; and forming a contact plug connected to the surface of the substrate in the contact hole.
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