发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND RECORDING MEDIUM
摘要 <p>Disclosed is a substrate processing apparatus which enables to efficiently remove an oxide layer and an organic material layer. Specifically disclosed is a substrate processing apparatus (10) wherein a third process unit (36) comprises a case-like process vessel (chamber) (50), a nitrogen gas supply system (190) and an ozone gas supply system (191). The ozone gas supply system (191) comprises an ozone gas supply unit (195) and an ozone gas supply pipe (196) connected to the ozone gas supply unit (195). The ozone gas supply pipe (196) has an ozone gas supply hole (197) having an opening facing to a wafer (W). The ozone gas supply unit (195) supplies an ozone (O&lt;SUB&gt;3&lt;/SUB&gt;) gas into the chamber (50) through the ozone gas supply hole (197) via the ozone gas supply pipe (196).</p>
申请公布号 WO2007094437(A1) 申请公布日期 2007.08.23
申请号 WO2007JP52792 申请日期 2007.02.09
申请人 TOKYO ELECTRON LIMITED;NISHIMURA, EIICHI;KIKUCHI, TAKAMICHI 发明人 NISHIMURA, EIICHI;KIKUCHI, TAKAMICHI
分类号 H01L21/3065;H01L21/304 主分类号 H01L21/3065
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