HIGH-STRENGTH SPUTTERING TARGET FOR FORMING FLUORESCENT-MATERIAL FILM IN ELECTROLUMINESCENT ELEMENT

摘要

A high-strength sputtering target for forming a fluorescent-material film in an electroluminescent element, the target having a composition comprising 20-50 mass% Al, 1-10 mass% Eu, and 0.5-20 mass% Mg, with the remainder being Ba and unavoidable impurities. It has a structure which comprises an intermetallic compound phase constituted of Mg and Al and an intermetallic compound phase constituted of Ba and Al and containing Eu in solution. The Mg-Al intermetallic compound phase comprises an Al<SUB>3</SUB>Mg<SUB>2</SUB> intermetallic compound, an Al<SUB>12</SUB>Mg<SUB>17</SUB> intermetallic compound, and an AlMg intermetallic compound, while the Ba-Al intermetallic compound phase containing Eu in solution comprises a BaAl<SUB>4</SUB> intermetallic compound phase containing Eu in solution in the Ba in the intermetallic compound and a Ba<SUB>7</SUB>Al<SUB>13</SUB> intermetallic compound phase containing Eu in solution in the Ba in the intermetallic compound.