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发明名称
Herstellungsverfahren von Barriereschicht für Kupfer-Verbindungsstruktur
摘要
申请公布号
DE60031191(T2)
申请公布日期
2007.08.23
申请号
DE20006031191T
申请日期
2000.02.28
申请人
FREESCALE SEMICONDUCTOR INC.
发明人
DENNING, DEAN J.;LOOP, DANIEL J.;GARCIA, SAM S.;HAMILTON, GREGORY NORMAN;SMITH, BRADLEY P.;ISLAM, MD. RABIUL;ANTHONY, BRIAN G.
分类号
C23C14/14;H01L21/285;C23C14/34;C23C14/50;C23C14/56;C23C16/44;H01L21/00;H01L21/28;H01L21/768;H01L23/532
主分类号
C23C14/14
代理机构
代理人
主权项
地址
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