发明名称 WIRE BONDING METHOD AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To permit the formation of a bonding wire connecting a long wiring distance with a low loop height, so that the wire will not be contacted with a chip angle upon bonding it by pressure at a second bonding point, and a distance becomes short as much as possible between the chip and the second bonding point. <P>SOLUTION: When a capillary has arrived at the highest point, the capillary is moved so that the bonding wire is provided with bending habit from a first bond point toward the second bond point, and is provided with a camber (D) whose radius of convex curvature is 0.5 mm-3.0 mm, above a part (C) having the bending habit toward the second bond point, while a part positioned above a chip angle after forming a loop is provided with a bending part (E) toward the second bond point with a bending angle of more than 15 degrees. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007214337(A) 申请公布日期 2007.08.23
申请号 JP20060032276 申请日期 2006.02.09
申请人 SUMITOMO METAL MINING CO LTD 发明人 KAWAKAMI HIROSHI;MAKI KOICHIRO;ISHIKAWA HARUO;ISHIKAWA SHINTARO
分类号 H01L21/60 主分类号 H01L21/60
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