| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which simply and easily carries out the existence of misfit dislocation and slip line produced on a semiconductor substrate and an epitaxial film formed on it. SOLUTION: A surface of a semiconductor substrate and a surface of an epitaxial film formed on it is spirally scanned by laser beam, and the information is obtained in a specified direction of its scattered beam. Definitely, it is observed by the misfit dislocation, the slip line, and the roughness (step) running orthogonal to substrate crystal direction produced on the substrate and film surface caused from them. The existence of scattered beam is observed in a crossed pattern having strong directivity, and the defects of the above misfit dislocation and slip line are detected if the crossed pattern is seen. COPYRIGHT: (C)2007,JPO&INPIT
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