SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device resistant to current destruction. SOLUTION: In the semiconductor device, an n--type silicon carbide epitaxial region 2 is laminated on an n+-type silicon carbide substrate 1, a p-type electric field relaxing zone 10 is formed in a predetermined part of the n--type silicon carbide epitaxial region 2, an n-type polycrystalline silicon zone 4 and a p-type polycrystalline silicon zone 3 are formed in a predetermined part of the n--type silicon carbide epitaxial region 2 and in a predetermined part of the p-type electric field relaxing zone 10, a gate electrode 6 is located adjacent to an interface between the n--type silicon carbide epitaxial region 2 and the n-type polycrystalline silicon zone 4 with a gate insulating film 5 disposed therebetween, a source electrode 8 is connected to the n-type polycrystalline silicon zone 4 and the p-type polycrystalline silicon zone 3, a drain electrode 9 is formed on the rear surface of the n+-type silicon carbide substrate 1, and the p-type electric field relaxing zone 10 are ohmically connected to the source electrode 8 with the p-type polycrystalline silicon zone 3 disposed therebetween. COPYRIGHT: (C)2007,JPO&INPIT