| 摘要 |
A semiconductor memory includes a plurality of first regions arranged along a first direction, each of which corresponds to a memory array including a plurality of word lines, bit lines and memory cells. A plurality of second regions are provided each of which is arranged alternately with respect to each of the first regions, and each including sense amplifiers connected to said bit lines to form an open line type semiconductor memory. A third region is also provided that is a region not sandwiched by the second regions, wherein the third region includes a plurality of dummy bit lines.
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