METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

A hydrogen ion is implanted into a nitride-based semiconductor crystal (10) provided on a first substrate (20) to form a hydrogen ion-implanted layer (13) within a low-dislocation density region (12). The nitride-based semiconductor crystal (10) is applied onto a second substrate (30). In this state, impact is externally applied to the assembly to separate the low-dislocation density region (12) in the nitride-based semiconductor crystal (10) along the hydrogen ion-implanted layer (13) and to transfer (separate) the low-dislocation density region (12) in its surface layer part (12b) onto the second substrate (30). In this case, The low-dislocation density region (12) in its lower layer part (12a)is not transferred onto the second substrate (30) but stays on the first substrate (20). The second substrate (30) onto which the surface layer part (12b) in the low-dislocation density region (12) has been transferred, is brought to a semiconductor substrate manufactured by the manufacturing process of the present invention, and the first substrate (20) in which the low-dislocation density region (12) in its lower layer part (12a) stays, is reutilized as a substrate for epitaxial growth.