摘要 |
A non-volatile memory device comprises a substrate with the dielectric layer formed thereon. A control gate and a floating gate are then formed next to each other on top of the dielectric layer separated by a gap. Accordingly, a non-volatile memory device can be constructed using a single poly process that is compatible with conventional CMOS processes. In addition, assist gates are formed on the dielectric layer next to the control gate and floating gate respectively.
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