| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a flip-flop light-emitting device whose optical utilization efficiency has been improved, while contact resistance between a p-type semiconductor layer and reflecting electrode has been reduced. <P>SOLUTION: In this flip-chip light-emitting device, an n-type semiconductor layer 11, an active layer 12, a p-type semiconductor layer 13 and a p-type electrode 16 are formed one by one on the upper surface of a substrate 10. Then, an n-type electrode 19 is formed on the exposed upper surface of the n-type semiconductor layer 11. The p-type electrode 16 is equipped with an ohmic contact layer 14 formed with a predetermined width l at the end of the upper surface of the p-type semiconductor layer 13 close to the n-type electrode 19, and a reflecting layer 15 covering the ohmic contact layer 14 and the upper surface of the p-type semiconductor layer 13 that is not covered by the ohmic contact layer 14. <P>COPYRIGHT: (C)2007,JPO&INPIT |
