| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a penetration area is arranged in an n-type well area so that the penetration area for electrically connecting a p-type well area and a semiconductor substrate, and a plurality of p-type well areas arranged within the n-type area may be easily overlapped. <P>SOLUTION: The semiconductor device is provided with a first area which is formed toward the inside of a semiconductor substrate from the surface thereof; a second area which is included in the first area, and to which the same conductive impurities as the semiconductor substrate are introduced; and a penetration area which is in contact with the bottom of the second area and is connected with the semiconductor substrate outside the first area while penetrating the first area, and to which the same conductive impurities as the semiconductor substrate are introduced. The central points of the penetration area are arranged like a honeycomb at high density in two-dimensional manner in the semiconductor device. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
