| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell and its manufacturing method. SOLUTION: A nonvolatile memory cell (200) comprises a first conductive substrate (202), a second conductive type first dopant region (204) in the substrate (202), a first conductive second dopant region (206) in the first dopant region (204), a first isolation region (214B) overlapping the first portion (202) of the substrate, the first dopant region (204), and the second dopant region (206), a second isolation region (214A) overlapping the second portion (202) of the substrate, the first dopant region (204), and the second dopant region (206), a contact region (208) which is doped in a larger quantity than for the second dopant region (206), a first gate insulator (212A) on the first isolation region (214B) and a part of the contact region (208), and a first gate conductor (210A) on the first gate insulator (212A). COPYRIGHT: (C)2007,JPO&INPIT
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