SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a high breakdown voltage and a low on-resistance. SOLUTION: The semiconductor device comprises a hetero semiconductor region 3 formed on an n-type SiC drain region 2 which is formed on one major surface of an n+-type SiC substrate 1; a gate electrode 5 arranged contiguously to the heterojunction of the n-type SiC drain region 2 and the hetero semiconductor region 3 through a gate insulation film 4; an electric field relax region 9 under a p-type gate electrode formed partially on the surface of the n-type SiC drain region 2, in face to face with the gate electrode 5 through the gate insulating film 4; and a triple contact DP where the gate insulation film 4, the hetero semiconductor region 3, and the n-type SiC drain region 2 touch each other. In the semiconductor device, impurity concentration on the surface of the electric field relax region 9 under a gate electrode is such a concentration as forming an inversion layer on the surface by an electric field from the gate electrode 5. COPYRIGHT: (C)2007,JPO&INPIT