| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which prevents data corruption of SRAM cells due to an influence of noise with reduced area. SOLUTION: In first and second SRAM cells SC00 and SC01 each including write transfer gate transistors 103 and 104 and read transfer gate transistors 105 and 106, the read transfer gate transistor 106 of the first SRAM cell SC00 is connected to a first bit line BL, and the read transfer gate transistor 106 of the second SRAM cell SC01 is connected to a second bit line/BL. Also, the transfer gate transistors 106 of the first and second SRAM cells SC00 and SC01 are connected to common read word line RWL. COPYRIGHT: (C)2007,JPO&INPIT
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