Compound semiconductor device and method of fabricating the same

摘要

In formation-by-growth of an AlGaN layer 3 as having a double-layered structure, a non-doped AlGaN layer (i-AlGaN layer) having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 3 nm on an i-GaN layer, and further thereon, an AlGaN layer (n-AlGaN layer) doped with Si in a concentration of approximately 2x10¹⁸/cm³ and having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 17 nm.