发明名称 CHARGED PARTICLE BEAM WRITING METHOD AND APPARATUS
摘要 A method for writing a pattern on a workpiece by use of a charged particle beam, the method includes calculating a corrected dose including at least a proximity effect correction dose for correction of proximity effect, calculating a corrected residual difference-corrected dose for correcting a correction residual difference of the corrected dose, calculating a exposure dose of the charged particle beam to be corrected by the corrected dose as corrected by the correction residual difference-corrected dose, and irradiating the charged particle beam onto the workpiece in such a way as to become the exposure dose.
申请公布号 US2007194250(A1) 申请公布日期 2007.08.23
申请号 US20070671814 申请日期 2007.02.06
申请人 NUFLARE TECHNOLOGY, INC. 发明人 SUZUKI JUNICHI;EMI KEIKO;ABE TAKAYUKI;IIJIMA TOMOHIRO
分类号 A61N5/00 主分类号 A61N5/00
代理机构 代理人
主权项
地址