| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve parallel operation efficiency of a plurality of nonvolatile memory devices in a nonvolatile semiconductor storage device. <P>SOLUTION: During a period T7-T8 of data transfer T6-T9 between a memory controller Memo_Cnt and one nonvolatile memory device Memo_Dv0 via an internal common bus Int_Bus, data transfer is interrupted. In the interruption period T7-T8, an internal read action command Int_Rd_CMD is transferred from the Memo_Cnt to another nonvolatile memory device Memo_DvN via the Int_Bus. In parallel to an internal read action Int_Rd_Ope from a nonvolatile memory array Memo_Ary0 to an internal buffer memory Buffer0 in the Memo_DvN, data transfer Data_Tr_Pr_Data between the Memo_Cnt and the Memo_Dv0 can be carried out. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
