METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming a diffraction grating with superior reproducibility and high accuracy. SOLUTION: According to a method of manufacturing a semiconductor device, a III-V compound semiconductor layer is deposited on the substrate. On the compound semiconductor layer, multiple grooves 3b constituting a diffraction grating 3a are formed. To embed the groove and cover the diffraction grating 3a, a first layer 4 constituted of InP is formed by MOCVD, by using organic metal as In material and PH3or organic phosphorus as P material. The temperature of the substrate is set higher than that when forming the first layer, a second layer 5 composed of InP being formed, with an active layer 7 being formed thereon. Thermal deformation is not generated in the compound semiconductor layer during a formation period of the first layer. In the formation process of the first layer, when the InP layer is deposited under the condition of making the growth rate different, the first layer is deposited with the growth rate slower than that of the InP layer, with which a photoluminescence intensity of the layer that corresponds to the active layer becomes one tenth of that of the time, when the InP layer is deposited under the condition of the growth rate of 0.2 micrometer/hour. COPYRIGHT: (C)2007,JPO&INPIT