| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element where the resonance plane thereof being nearly equal to a mirror plane is obtained by means of cleavage, and a method for producing the resonance plane of the laser element. SOLUTION: In the nitride semiconductor laser element, nitride semiconductor layers including an active layer are grown on a substrate, subsequently, a groove is formed in the surface of the top layer of the nitride semiconductor layers, the top nitride semiconductor is cleaved from the groove, the cleavage plane of the cleaved semiconductor layer is a plane corresponding to anyone of (1T00) face, (10T0) face, (01T0) face, (T100) face, (T010) face, and (0T10) face, and at least one of the resonance planes of the laser element is caused to be the cleavage plane. COPYRIGHT: (C)2007,JPO&INPIT
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