| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which is capable of raising a selection ratio of SiGe (silicon germanium) to Si (silicon), SiN, resist, NiSi, CoSi, oxides, etc., and improving a hetero-structure part composed of Si (silicon) and SiGe (silicon germanium) in processing accuracy; and to provide a method of manufacturing a semiconductor device using the same. SOLUTION: A microwave plasma etching method comprises a process of etching a hetero structure that contains an SiGe (silicon germanium) layer 2 and an Si (silicon) layer 4 formed on the SiGe (silicon germanium) layer 2. In the process, only a fluoride gas is used as reactive gas; its flow rate, a processing pressure, a microwave power, and a processing temperature are set at 10 to 800 sccm, 266 Pa or below, 150 to 400 W, and 5 to 25°C respectively; and the SiGe (silicon germanium) layer 2 is selectively subjected to isotropic etching. COPYRIGHT: (C)2007,JPO&INPIT
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