| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly sensitive solid state image sensor with excellent optical characteristics for thinning an element part and improving collection efficiency while sufficiently keeping a working margin on a peripheral circuit of the solid state image sensor. SOLUTION: A manufacturing method of the solid state image sensor includes a step of forming a photoelectric converter, and a charge transfer including a charge transfer electrode for transferring a charge caused by the photoelectric conversion part; a step of forming an insulation film on the surface of a semiconductor substrate in a region corresponding to a light receiving region of the photoelectric converter to have a recess having a surface facing the photoelectric converter; and a step of forming an in-layer lens in the recess formed on the insulation film. The method includes, prior to the step of forming the in-layer lens, a step of forming the insulation film and thereafter removing at least a surface of the insulation film on the photoelectric conversion part, so that an inner wall of the recess has a deep inclination, and that the in-layer lens is formed in the recess. COPYRIGHT: (C)2007,JPO&INPIT
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