| 摘要 |
PROBLEM TO BE SOLVED: To obtain a nitride semiconductor laser improved against COD. SOLUTION: The nitride semiconductor laser comprises a lower clad layer, a quantum well active layer, and an upper clad layer in this order. The quantum well active layer has a plurality of well layers composed of undoped InGaN, and an undoped barrier layer pinched between the well layers. Also, the barrier layer has a first layer composed of InGaN, a second layer composed of GaN, and a third layer composed of InGaN. In compositions of the first layer and the third layer are all comprised of less than a half of the In composition of the well layer. COPYRIGHT: (C)2007,JPO&INPIT
|
