| 摘要 |
PROBLEM TO BE SOLVED: To reduce the smear caused by the asymmetry of the impurity concentration profile in a CCD-type solid-state imaging device. SOLUTION: This CCD-type solid-state imaging device 20 comprises photoelectric conversion elements 23 formed and arranged in a two-dimensional array form on the surface of a semiconductor substrate 21, a first charge transfer path buried channel 24b formed in one side of the photoelectric conversion element 23 via a readout gate 25, a second charge transfer path buried channel 24a formed in the other side of the photoelectric conversion element 23 via a channel stop 26, and a light-shielding film 36 covering the surface of the semiconductor substrate 21 and formed with an opening 36a directly above the photoelectric conversion elements 23. The opening 36a of the light-shielding film 36 is formed deviated from the second charge transfer path buried channel 24a toward the side of the first charge transfer path buried channel 24b. COPYRIGHT: (C)2007,JPO&INPIT
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