| 摘要 |
An integrated circuit is silicided by depositing at least one metal on a silicon-containing region and forming a metal silicide. Residue metal that has not been silicided during the formation of the metal silicide is then removed. The removal of the residue metal involves the conversion of the residue metal to an alloy containing the germanide of said metal with minimal if any adverse affect on the silicide. Next, the alloy is removed, in a manner selective to the silicide, by dissolving the alloy in a chemical solution.
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