发明名称 |
Vertical gallium-nitride based light emitting diode |
摘要 |
A vertical GaN-based LED is provided. The vertical GaN-based LED includes: an n-electrode; an n-type GaN layer formed under the n-electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer, the p-type GaN layer having a first uneven structure formed on a surface that does not contact the active layer; a p-type reflective electrode formed under the p-type GaN layer having the first uneven structure; and a support layer formed under the p-type reflective electrode.
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申请公布号 |
US2007194324(A1) |
申请公布日期 |
2007.08.23 |
申请号 |
US20060602286 |
申请日期 |
2006.11.21 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM DONG W.;OH BANG W.;OH JEONG T.;BACK HYUNG K.;KIM MIN J. |
分类号 |
H01L33/22;H01L31/12;H01L33/32 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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