发明名称 |
METHOD OF FABRICATING A PRECISION BURIED RESISTOR |
摘要 |
The present invention provides a semiconductor structure including a buried resistor with improved control, in which the resistor is fabricated in a region of a semiconductor substrate beneath a well region that is also present in the substrate. In accordance with the present invention, the inventive structure includes a semiconductor substrate containing at least a well region; and a buried resistor located in a region of the semiconductor substrate that is beneath said well region. The present invention also provides a method of fabricating such a structure in which a deep ion implantation process is used to form the buried resistor and a shallower ion implantation process is used in forming the well region.
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申请公布号 |
US2007194390(A1) |
申请公布日期 |
2007.08.23 |
申请号 |
US20060276282 |
申请日期 |
2006.02.22 |
申请人 |
CHINTHAKINDI ANIL K;COOLBAUGH DOUGLAS D;DOWNES KEITH E;ESHUN EBENEZER E;FLORKEY JOHN E;GREER HEIDI L;RASSEL ROBERT M;STAMPER ANTHONY K;VAED KUNAL |
发明人 |
CHINTHAKINDI ANIL K.;COOLBAUGH DOUGLAS D.;DOWNES KEITH E.;ESHUN EBENEZER E.;FLORKEY JOHN E.;GREER HEIDI L.;RASSEL ROBERT M.;STAMPER ANTHONY K.;VAED KUNAL |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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