发明名称 |
RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMATION OF RESIST PATTERN |
摘要 |
<p>Disclosed is a resist composition for immersion lithography comprising: a resin component (A) whose alkali solubility can vary by the action of an acid; and an acid-generator component (B) which can generate an acid when exposed to light. The resin component (A) contains a fluorine atom and comprises a resin (A1) and a resin (A2), wherein the resin (A1) has no acid-dissociating group and the resin (A2) has a constituent unit (a') derived from acrylic acid and contains no fluorine atom.</p> |
申请公布号 |
WO2007094192(A1) |
申请公布日期 |
2007.08.23 |
申请号 |
WO2007JP51945 |
申请日期 |
2007.02.05 |
申请人 |
TOKYO OHKA KOGYO CO., LTD.;IRIE, MAKIKO;IWAI, TAKESHI |
发明人 |
IRIE, MAKIKO;IWAI, TAKESHI |
分类号 |
G03F7/004;G03F7/039;G03F7/38;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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