发明名称 RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMATION OF RESIST PATTERN
摘要 <p>Disclosed is a resist composition for immersion lithography comprising: a resin component (A) whose alkali solubility can vary by the action of an acid; and an acid-generator component (B) which can generate an acid when exposed to light. The resin component (A) contains a fluorine atom and comprises a resin (A1) and a resin (A2), wherein the resin (A1) has no acid-dissociating group and the resin (A2) has a constituent unit (a') derived from acrylic acid and contains no fluorine atom.</p>
申请公布号 WO2007094192(A1) 申请公布日期 2007.08.23
申请号 WO2007JP51945 申请日期 2007.02.05
申请人 TOKYO OHKA KOGYO CO., LTD.;IRIE, MAKIKO;IWAI, TAKESHI 发明人 IRIE, MAKIKO;IWAI, TAKESHI
分类号 G03F7/004;G03F7/039;G03F7/38;H01L21/027 主分类号 G03F7/004
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