CMOS TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A CMOS transistor is provided to easily use metal as a gate conduction layer of a CMOS transistor by preventing movement of a work function of a gate conductive layer even in the case of a high temperature treatment for activating movement of the impurities of a source/drain. An NMOS transistor is formed in a first region of a semiconductor substrate(10). A PMOS transistor is formed in a second region of the semiconductor substrate. The NMOS transistor includes more nitrogen as it goes upward from the lower part of the NMOS transistor in contact with the surface of a gate insulation layer, having a gate conduction layer made of metal with a work function of 4.0~4.3 eV The PMOS transistor includes more nitrogen as it goes upward from the lower part of the PMOS transistor in contact with the surface of a gate insulation layer, having a gate conduction layer made of metal with a work function of 4.7~5.0 eV.