| 摘要 |
The invention relates to a method of manufacturing a semiconductor device comprising a substrate ( 1 ) and a semiconductor body ( 2 ) in which at least one semiconductor element is formed, wherein, in the semiconductor body ( 2 ), a semiconductor island ( 3 ) is formed by forming a first cavity ( 4 ) in the surface of the semiconductor body ( 2 ), the walls of said first cavity being covered with a first dielectric layer ( 6 ), after which, by means of underetching through the bottom of the cavity ( 4 ), a lateral part of the semiconductor body ( 2 ) is removed, thereby forming a cavity ( 20 ) in the semiconductor body ( 2 ) above which the semiconductor island ( 3 ) is formed, and wherein a second cavity ( 5 ) is formed in the surface of the semiconductor body ( 2 ), the walls of said second cavity being covered with a second dielectric layer, and one of the walls covered with said second dielectric layer forming a side wall of the semiconductor island ( 3 ). According to the invention, the same dielectric layer ( 6 ) is chosen for the first and the second dielectric layer, a lateral size of the second cavity ( 5 ) and the thickness of the dielectric layer ( 6 ) are chosen such that the second cavity ( 5 ) becomes nearly completely filled by the dielectric layer ( 6 ), and the lateral sizes of the first cavity ( 4 ) are chosen such that the walls and the bottom of the first cavity ( 4 ) are provided with a uniform coating by the dielectric layer ( 6 ). In this way, a semiconductor island ( 3 ) which is isolated from its environment can be made using a minimum number of (masking) steps. |
